PDTA115T

更新时间： 2024-11-12 11:52:27

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	103K
描述
PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

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PDTA115T 数据手册

PDTA115T series

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open

Rev. 05 — 2 September 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP resistor-equipped transistors.

Table 1.

Product overview

Type number

Package

NXP

NPN complement

JEITA

SC-75

SC-59

SC-101

SC-43A

PDTA115TE

PDTA115TK

PDTA115TM

PDTA115TS^[1]

PDTA115TT

PDTA115TU

SOT416

SOT346

SOT883

SOT54 (TO-92)

SOT23

PDTC115TE

PDTC115TK

PDTC115TM

PDTC115TS

PDTC115TT

PDTC115TU

SOT323

SC-70

[1] Also available in SOT54A and SOT54 variant packages (see Section 2)

1.2 Features

I Built-in bias resistors

I Reduces component count

I Simpliﬁes circuit design

I Reduces pick and place costs

1.3 Applications

I General purpose switching and

I Circuit drivers

ampliﬁcation

I Inverter and interface circuits

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

−50

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

open base

−100

130

kΩ

100

12 3 4 5 6 7...17

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