Datasheet > PBSS5350D

PBSS5350D

更新时间： 2024-11-15 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		开关光电二极管晶体管
页数	文件大小	规格书
9页	993K
描述
50 V, 3 A PNP low VCEsat transistorProduction

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PBSS5350D 数据手册

PBSS5350D

50 V, 3 A PNP low VCEsat transistor

1 January 2023

Product data sheet

1. General description

PNP low V_CEsattransistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4350D

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High current capability

High efficiency due to less heat generation

Smaller Printed-Circuit Board (PCB) area than for conventional transistors

3. Applications

•

Supply line switching circuits

Battery management applications

DC-to-DC conversion

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-50

I_C

collector current

-3

I_CM

peak collector current

-5

R_CEsat

collector-emitter

saturation resistance

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

120

150

mΩ

5. Pinning information

Table 2. Pinning information

Symbol

Description

collector

base

Simplified outline

Graphic symbol

emitter

collector

SC-74; TSOP6 (SOT457)

sym030

12 3 4 5 6 7...9

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PBSS5350D 替代型号

型号	品牌	替代类型	描述	数据表
PBSS5350D	NXP	类似代替	PNP transistor
DSS5240T-7	DIODES	功能相似	LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
MBT35200MT1	ONSEMI	功能相似	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portabl

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