Datasheet > PBSS5350X (KBSS5350X)

PBSS5350X (KBSS5350X)

更新时间： 2024-11-15 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	451K
描述
PNP Transistor

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数据手册

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PBSS5350X (KBSS5350X) 数据手册

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SMD Type

Transistors

PNP Transistor

PBSS5350X (KBSS5350X)

■ Features

1.70 0.1

● Low collector-emitter saturation voltage VCEsat

● High collector current capability: I and ICM

● Higher efficiency leading to less heat generation

● Reduced printed-circuit board requirements.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings (Ta = 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Collector - base voltage

Collector - emitter voltage

Emitter - base voltage

Collector current (DC)

Peak collector current

Base current (DC)

VCBO

VCEO

VEBO

-50

-5

Note 4

-3

Limited by T^j(max)

-5

-0.5

0.55

Note 1

Note 2

Note 3

Note 4

Note 1

Note 2

Note 3

Note 4

Collector power dissipation

tot

1.4

1.6

225

125

Thermal resistance junction to ambient

th(j-a)

th(j-s)

℃/W

Thermal resistance from junction to soldering point

Junction temperature

150

-65 to 150

℃

Storage temperature range

Notes:

stg

1.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.

2.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm².

3.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm².

4.Device mounted on a ceramic printed-circuit board 7 cm², single-sided copper, tin-plated.

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