Datasheet > PBSS5350D-Q

PBSS5350D-Q

更新时间： 2024-11-15 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	214K
描述
50 V, 3 A PNP low VCEsat transistorProduction

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PBSS5350D-Q 数据手册

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

10 May 2022

Product data sheet

1. General description

PNP low V_CEsattransistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4350D-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High current capability

High efficiency due to less heat generation

Smaller Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switching circuits

Battery management applications

DC-to-DC conversion

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-50

I_C

collector current

-3

I_CM

peak collector current

-5

R_CEsat

collector-emitter

saturation resistance

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

120

150

mΩ

5. Pinning information

Table 2. Pinning information

Symbol

Description

collector

base

Simplified outline

Graphic symbol

1, 2, 5, 6

emitter

collector

SC-74; TSOP6 (SOT457)

sym030

12 3 4 5 6 7...9

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