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DSS5240T-7 PDF预览

DSS5240T-7

更新时间: 2024-11-14 09:57:47
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
4页 92K
描述
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

DSS5240T-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:7.52Samacsys Confidence:
Samacsys Status:ReleasedSamacsys PartID:441135
Samacsys Pin Count:3Samacsys Part Category:Undefined or Miscellaneous
Samacsys Package Category:OtherSamacsys Footprint Name:SOT103P240X110-3N
Samacsys Released Date:2017-01-11 16:09:24Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

DSS5240T-7 数据手册

 浏览型号DSS5240T-7的Datasheet PDF文件第2页浏览型号DSS5240T-7的Datasheet PDF文件第3页浏览型号DSS5240T-7的Datasheet PDF文件第4页 
DSS5240T  
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ideal for Medium Power Amplification and Switching  
Case: SOT-23  
Ultra Low Collector-Emitter Saturation Voltage  
Complimentary NPN Type Available (DSS4240T)  
Lead Free By Design/RoHS Compliant (Note 1)  
“Green” Device (Note 2)  
Case Material: Molded Plastic, "Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.008 grams (approximate)  
C
E
B
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-40  
-40  
-5  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Collector Current  
Continuous Collector Current  
Peak Base Current  
-3  
A
-2  
A
IC  
-0.3  
A
IBM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
600  
Unit  
mW  
°C/W  
°C  
Power Dissipation (Note 3) @ TA = 25°C  
209  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
1 of 4  
www.diodes.com  
November 2008  
© Diodes Incorporated  
DSS5240T  
Document number: DS31591 Rev. 2 - 2  

DSS5240T-7 替代型号

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