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PBSS5350D,115 PDF预览

PBSS5350D,115

更新时间: 2024-11-14 14:35:15
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
12页 240K
描述
PBSS5350D - 50 V, 3 A PNP low VCEsat (BISS) transistor TSOP 6-Pin

PBSS5350D,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:PLASTIC, SC-74, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.16
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

PBSS5350D,115 数据手册

 浏览型号PBSS5350D,115的Datasheet PDF文件第2页浏览型号PBSS5350D,115的Datasheet PDF文件第3页浏览型号PBSS5350D,115的Datasheet PDF文件第4页浏览型号PBSS5350D,115的Datasheet PDF文件第5页浏览型号PBSS5350D,115的Datasheet PDF文件第6页浏览型号PBSS5350D,115的Datasheet PDF文件第7页 
PBSS5350D  
T457  
SO  
50 V, 3 A PNP low VCEsat (BISS) transistor  
Rev. 6 — 28 June 2011  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small  
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS4350D  
1.2 Features and benefits  
Low collector-emitter saturation  
AEC-Q101 qualified  
voltage VCEsat  
Smaller Printed-Circuit Board (PCB)  
High current capability  
area than for conventional transistors  
High efficiency due to less heat  
generation  
1.3 Applications  
Supply line switching circuits  
DC-to-DC conversion  
Battery management applications  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-emitter  
voltage  
open base  
-
-
-50  
V
IC  
collector current  
-
-
-
-
-3  
A
ICM  
peak collector current  
-
-5  
A
RCEsat  
collector-emitter  
IC = -2 A; IB = -200 mA; pulsed;  
120  
150  
m  
saturation resistance  
tp 300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
 
 
 
 
 

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