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PBSS5330PA PDF预览

PBSS5330PA

更新时间: 2024-11-14 12:46:47
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
15页 166K
描述
30 V, 3 A PNP low VCEsat transistor

PBSS5330PA 数据手册

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PBSS5330PA  
30 V, 3 A PNP low VCEsat (BISS) transistor  
Rev. 01 — 19 April 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra  
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with  
medium power capability.  
NPN complement: PBSS4330PA.  
1.2 Features and benefits  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
„ Exposed heat sink for excellent thermal and electrical conductivity  
„ Leadless small SMD plastic package with medium power capability  
1.3 Applications  
„ Loadswitch  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VCEO collector-emitter voltage  
IC  
Quick reference data  
Conditions  
Min  
Typ  
Max  
30  
3  
Unit  
V
open base  
-
-
-
-
-
-
collector current  
A
ICM  
peak collector current  
single pulse;  
5  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 3 A;  
-
75  
107  
mΩ  
saturation resistance  
IB = 300 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  

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