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PBSS5330PAS PDF预览

PBSS5330PAS

更新时间: 2024-11-15 11:16:11
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
18页 729K
描述
30 V, 3 A PNP low VCEsat (BISS) transistorProduction

PBSS5330PAS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:S-PDSO-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):165 MHz
Base Number Matches:1

PBSS5330PAS 数据手册

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PBSS5330PAS  
30 V, 3 A PNP low VCEsat (BISS) transistor  
11 September 2014  
Product data sheet  
1. General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra  
thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic  
package with medium power capability and visible and soldarable side pads.  
NPN complement: PBSS4330PAS  
2. Features and benefits  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High collector current gain (hFE) at high IC  
High efficiency due to less heat generation  
High temperature applications up to 175 °C  
Reduced Printed-Circuit Board (PCB) area requirements  
Leadless small SMD plastic package with soldarable side pads  
Exposed heat sink for excellent thermal and electrical conductivity  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
AEC-Q101 qualified  
3. Applications  
Loadswitch  
Battery-driven devices  
Power management  
Charging circuits  
Power switches (e.g. motors, fans)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-30  
V
IC  
collector current  
-
-
-
-
-3  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
-5  
A
RCEsat  
collector-emitter  
IC = -3 A; IB = -300 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C  
75  
107  
mΩ  
saturation resistance  
 
 
 
 

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