Datasheet > PBSS4140DPN-Q

PBSS4140DPN-Q

更新时间： 2024-04-09 19:02:09

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	220K
描述
40 V low VCEsat NPN/PNP transistorProduction

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PBSS4140DPN-Q 数据手册

PBSS4140DPN-Q

40 V low VCEsat NPN/PNP transistor

9 November 2023

Product data sheet

1. General description

NPN/PNP low V_CEsattransistor pair in an SC-74 (SOT457) plastic package.

2. Features and benefits

•

600 mW total power dissipation

•

Low collector-emitter saturation voltage

High current capability

Improved device reliability due to reduced heat generation

Replaces two SOT23 packaged low V_CEsattransistors on same PCB area

Reduces required PCB area

Reduced pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and muting

LCD backlighting

Supply line switching circuits

Battery driven equipment (mobile phones, video cameras and hand-held devices)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

TR1 (NPN)

R_CEsat

collector-emitter

saturation resistance

I_C= 500 mA; I_B= 50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

260

300

500

mΩ

TR2 (PNP)

R_CEsat

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...10

下载PDF

与PBSS4140DPN-Q相关器件

型号	品牌	描述	获取价格	数据表
PBSS4140DPNT/R	NXP	TRANSISTOR 1000 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC	获取价格
PBSS4140S	NXP	40 V low VCEsat NPN transistor	获取价格
PBSS4140S	FOSHAN	TO-92	获取价格
PBSS4140S,126	NXP	PBSS4140S	获取价格
PBSS4140SAMO	NXP	TRANSISTOR 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3	获取价格
PBSS4140SH	PANJIT	SOT-89	获取价格