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PBSS4021SN,115 PDF预览

PBSS4021SN,115

更新时间: 2024-11-27 14:44:07
品牌 Logo 应用领域
恩智浦 - NXP PC开关光电二极管晶体管
页数 文件大小 规格书
15页 153K
描述
PBSS4021SN - 20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor SOIC 8-Pin

PBSS4021SN,115 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOIC包装说明:PLASTIC, SOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N最大集电极电流 (IC):7.5 A
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):2.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):115 MHzBase Number Matches:1

PBSS4021SN,115 数据手册

 浏览型号PBSS4021SN,115的Datasheet PDF文件第2页浏览型号PBSS4021SN,115的Datasheet PDF文件第3页浏览型号PBSS4021SN,115的Datasheet PDF文件第4页浏览型号PBSS4021SN,115的Datasheet PDF文件第5页浏览型号PBSS4021SN,115的Datasheet PDF文件第6页浏览型号PBSS4021SN,115的Datasheet PDF文件第7页 
PBSS4021SN  
20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor  
Rev. 2 — 11 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)  
medium power Surface-Mounted Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP/PNP  
complement  
NPN/PNP  
complement  
Name  
PBSS4021SN  
SOT96-1  
SO8  
PBSS4021SP  
PBSS4021SPN  
1.2 Features and benefits  
„ Very low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High efficiency due to less heat generation  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ Loadswitch  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 2.  
Symbol Parameter  
VCEO collector-emitter voltage  
IC  
Quick reference data  
Conditions  
Min  
Typ  
Max  
20  
Unit  
V
open base  
-
-
-
-
-
-
collector current  
7.5  
15  
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 5 A; IB = 0.5 A  
-
25  
35  
mΩ  
saturation resistance  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 

PBSS4021SN,115 替代型号

型号 品牌 替代类型 描述 数据表
PBSS4021SN NXP

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