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PBSS4032PD PDF预览

PBSS4032PD

更新时间: 2024-11-27 10:17:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
14页 182K
描述
30 V, 2.7 A PNP low VCEsat (BISS) transistor

PBSS4032PD 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-74包装说明:PLASTIC, SC-74, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
最大集电极电流 (IC):2.7 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:PURE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):104 MHz
Base Number Matches:1

PBSS4032PD 数据手册

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PBSS4032PD  
30 V, 2.7 A PNP low VCEsat (BISS) transistor  
Rev. 01 — 27 January 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)  
small Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS4032ND.  
1.2 Features  
„ Low collector-emitter saturation voltage VCEsat  
„ Optimized switching time  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High energy efficiency due to less heat generation  
„ AEC-Q101 qualified  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ DC-to-DC conversion  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
2.7  
5  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 3 A;  
-
88  
130  
mΩ  
saturation resistance  
IB = 300 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  

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