Datasheet > PBSS4041PT,215

PBSS4041PT,215

更新时间： 2024-11-29 21:03:47

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
15页	169K
描述
PBSS4041PT - 60 V, 2.7 A PNP low VCEsat (BISS) transistor TO-236 3-Pin

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技术参数
数据手册
替代型号

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PBSS4041PT,215 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-236
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

PBSS4041PT,215 数据手册

PBSS4041PT

60 V, 2.7 A PNP low V_CEsat(BISS) transistor

Rev. 02 — 9 March 2010

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4041NT.

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High energy efficiency due to less heat generation

AEC-Q101 qualified

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

−60

−2.7

−8

Unit

collector-emitter voltage open base

collector current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= −3 A;

120

mΩ

saturation resistance

I_B= −300 mA

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...15

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PBSS4041PT,215 替代型号

型号	品牌	替代类型	描述	数据表
PBSS4041PT	NXP	功能相似	60 V, 2.7 A PNP low VCEsat (BISS) transistor

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