Datasheet > PBSS4041SP,115

PBSS4041SP,115

更新时间： 2024-11-27 22:54:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	1045K
描述
TRANS 2PNP 60V 5.9A 8SO

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PBSS4041SP,115 数据手册

PBSS4041SP

60 V, 5.9 A PNP/PNP low V_CEsat(BISS) transistor

Rev. 2 — 18 October 2010

Product data sheet

1. Product profile

1.1 General description

PNP/PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)

medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Product overview

Type number

Package

Nexperia

SOT96-1

NPN/NPN

complement

NPN/PNP

complement

Name

PBSS4041SP

SO8

PBSS4041SN

PBSS4041SPN

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 2.

Symbol Parameter

V_CEOcollector-emitter voltage

I_C

Quick reference data

Conditions

Min

Typ

Max

−60

−5.9

−15

Unit

open base

collector current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= −4 A; I_B= −0.4 A

mΩ

saturation resistance

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...15

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