Datasheet > PBSS4112PANP

PBSS4112PANP

更新时间： 2024-11-27 12:32:47

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
21页	344K
描述
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

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技术参数
数据手册

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PBSS4112PANP 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.76
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	TIN
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

PBSS4112PANP 数据手册

PBSS4112PANP

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

29 November 2012

Product data sheet

1. Product profile

1.1 General description

NPN/PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

High efficiency due to less heat generation

AEC-Q101 qualified

•

1.3 Applications

Load switch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

120

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

1.5

TR1 (NPN)

R_CEsat

collector-emitter

I_C= 500 mA; I_B= 50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

240

mΩ

saturation resistance

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