Datasheet > PBSS4032PX-Q

PBSS4032PX-Q

更新时间： 2024-11-30 17:15:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	289K
描述
30 V, 4.2 A PNP low VCEsat transistorProduction

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PBSS4032PX-Q 数据手册

PBSS4032PX-Q

30 V, 4.2 A PNP low VCEsat transistor

15 April 2024

Product data sheet

1. General description

PNP low V_CEsattransistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted

Device (SMD) plastic package.

NPN complement: PBSS4032NX-Q

2. Features and benefits

•

Very low collector-emitter saturation voltage V_CEsat

•

Optimized switching time

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High energy efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-30

I_C

collector current

-4.2

-10

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= -4 A; I_B= -400 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

mΩ

12 3 4 5 6 7...14

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