Datasheet > PBSS4032PT-215

PBSS4032PT-215

更新时间： 2024-11-28 01:19:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	181K
描述
30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 â 18 December 2009

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PBSS4032PT-215 数据手册

PBSS4032PT

30 V, 2.4 A PNP low V_CEsat(BISS) transistor

Rev. 01 — 18 December 2009

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032NT.

1.2 Features

Low collector-emitter saturation voltage V_CEsat

Optimized switching time

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High energy efficiency due to less heat generation

AEC-Q101 qualified

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

Battery-driven devices

Power management

Charging circuits

1.4 Quick reference data

Table 1.

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

−30

−2.4

−5

Unit

collector-emitter voltage open base

collector current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= −2 A;

110

165

mΩ

saturation resistance

I_B= −200 mA

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...14

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