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PBSS4032NT PDF预览

PBSS4032NT

更新时间: 2024-11-29 12:19:47
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管
页数 文件大小 规格书
14页 191K
描述
30 V, 2.6 A NPN low VCEsat (BISS) transistor

PBSS4032NT 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
Is Samacsys:N最大集电极电流 (IC):2.6 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):300JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

PBSS4032NT 数据手册

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PBSS4032NT  
30 V, 2.6 A NPN low VCEsat (BISS) transistor  
Rev. 01 — 18 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)  
small Surface-Mounted Device (SMD) plastic package.  
PNP complement: PBSS4032PT.  
1.2 Features  
„ Low collector-emitter saturation voltage VCEsat  
„ Optimized switching time  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High energy efficiency due to less heat generation  
„ AEC-Q101 qualified  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ DC-to-DC conversion  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
2.6  
5
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
saturation resistance  
IC = 2.5 A;  
IB = 0.25 A  
-
76  
105  
mΩ  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  

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