5秒后页面跳转
PBSS4032NX,115 PDF预览

PBSS4032NX,115

更新时间: 2024-11-27 19:57:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 178K
描述
PBSS4032NX - 30 V, 4.7 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin

PBSS4032NX,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-89
针数:3Reach Compliance Code:compliant
风险等级:5.58Base Number Matches:1

PBSS4032NX,115 数据手册

 浏览型号PBSS4032NX,115的Datasheet PDF文件第2页浏览型号PBSS4032NX,115的Datasheet PDF文件第3页浏览型号PBSS4032NX,115的Datasheet PDF文件第4页浏览型号PBSS4032NX,115的Datasheet PDF文件第5页浏览型号PBSS4032NX,115的Datasheet PDF文件第6页浏览型号PBSS4032NX,115的Datasheet PDF文件第7页 
PBSS4032NX  
30 V, 4.7 A NPN low VCEsat (BISS) transistor  
Rev. 01 — 1 April 2010  
Product data sheet  
1. Product profile  
1.1 General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and  
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.  
PNP complement: PBSS4032PX.  
1.2 Features and benefits  
„ Very low collector-emitter saturation voltage VCEsat  
„ Optimized switching time  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High energy efficiency due to less heat generation  
„ AEC-Q101 qualified  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
4.7  
10  
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 4 A;  
-
45  
62.5  
mΩ  
saturation resistance  
IB = 400 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 

与PBSS4032NX,115相关器件

型号 品牌 获取价格 描述 数据表
PBSS4032NX-Q NEXPERIA

获取价格

30 V, 4.7 A NPN low VCEsat transistorProduction
PBSS4032NZ NEXPERIA

获取价格

30 V, 4.9 A NPN low VCEsat (BISS) transistorProduction
PBSS4032PD NXP

获取价格

30 V, 2.7 A PNP low VCEsat (BISS) transistor
PBSS4032PD NEXPERIA

获取价格

30 V, 2.7 A PNP low VCEsat (BISS) transistorProduction
PBSS4032PD,115 ETC

获取价格

TRANS PNP 30V 2.7A 6TSOP
PBSS4032PT NEXPERIA

获取价格

30 V, 2.4 A PNP low VCEsat (BISS) transistorProduction
PBSS4032PT NXP

获取价格

30 V, 2.4 A PNP low VCEsat (BISS) transistor
PBSS4032PT,215 NXP

获取价格

PBSS4032PT - 30 V, 2.4 A PNP low VCEsat (BISS) transistor TO-236 3-Pin
PBSS4032PT_15 NXP

获取价格

30 V, 2.4 A PNP low VCEsat (BISS) transistor
PBSS4032PT-215 NXP

获取价格

30 V, 2.4 A PNP low VCEsat (BISS) transistor