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PBSS4021PT PDF预览

PBSS4021PT

更新时间: 2024-11-29 10:17:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关光电二极管
页数 文件大小 规格书
14页 177K
描述
20 V, 3.5 A PNP low VCEsat (BISS) transistor

PBSS4021PT 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
最大集电极电流 (IC):3.5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):155 MHzBase Number Matches:1

PBSS4021PT 数据手册

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PBSS4021PT  
20 V, 3.5 A PNP low VCEsat (BISS) transistor  
Rev. 01 — 29 January 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)  
small Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS4021NT.  
1.2 Features  
„ Very low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High energy efficiency due to less heat generation  
„ AEC-Q101 qualified  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ Loadswitch  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
3.5  
8  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 4 A;  
-
55  
82.5  
mΩ  
saturation resistance  
IB = 400 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  

PBSS4021PT 替代型号

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