Datasheet > PBSS4021NZ

PBSS4021NZ

更新时间： 2024-11-28 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	726K
描述
20 V, 8 A NPN low VCEsat (BISS) transistorProduction

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PBSS4021NZ 数据手册

PBSS4021NZ

20 V, 8 A NPN low V_CEsat(BISS) transistor

Rev. 01 — 31 March 2010

Product data sheet

1. Product profile

1.1 General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4021PZ.

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High energy efficiency due to less heat generation

AEC-Q101 qualified

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage open base

collector current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= 6 A;

mΩ

saturation resistance

I_B= 600 mA

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...15

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