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NVTFS002N04CLTAG PDF预览

NVTFS002N04CLTAG

更新时间： 2024-11-06 11:15:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 329K
描述
单 N 沟道，40 V，2.2 Ω，142 A，功率 MOSFET

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NVTFS002N04CLTAG 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：5 weeks
风险等级：5.75JESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：NOT SPECIFIED
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NVTFS002N04CLTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single  
N-Channel  
40 V, 2.2 mW, 142 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
2.2 mW @ 10 V  
3.5 mW @ 4.5 V  
40 V  
142 A  
N−Channel  
D (5 − 8)  
NVTFS002N04CL  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
G (4)  
• Low Capacitance to Minimize Driver Losses  
• NVTFWS002N04CL − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
S (1, 2, 3)  
• These Devices are Pb−Free and are RoHS Compliant  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
WDFN8  
(m8FL)  
CASE 511DY  
J
1
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
S
S
S
G
D
D
D
D
1
XXXX  
AYWWG  
G
V
DSS  
WDFNW8  
CASE 515AP  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
142  
80  
A
C
D
q
JC  
T
C
(Notes 1, 2, 3, 4)  
XXXX = Specific Device Code  
Steady  
State  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Power Dissipation  
T
C
P
85  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
27  
= Pb−Free Package  
Continuous Drain  
Current R  
T = 25°C  
I
28  
A
D
(Note: Microdot may be in either location)  
q
JA  
T = 100°C  
A
20  
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.2  
1.6  
706  
W
D
R
(Notes 1, 3)  
q
JA  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
70.4  
268  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 10.2 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
1.8  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
46.5  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2022 − Rev. 2  
NVTFS002N04CL/D  
 
12345678

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