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NVTFS015P03P8ZTAG

更新时间： 2024-11-06 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 273K
描述
Power MOSFET, Single, P-Channel, µ8FL -30 V, 7.5 mΩ, -88.6 A

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NVTFS015P03P8ZTAG 数据手册

 浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第2页浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第3页浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第4页浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第5页浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第6页浏览型号NVTFS015P03P8ZTAG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel, m8FL  
V
R
I
D
(BR)DSS  
DS(on)  
−30 V  
7.5 mW @ −10 V  
12 mW @ −4.5 V  
−88.6 A  
-30 V, 7.5 mW, -88.6 A  
S (1, 2, 3)  
NVTFS015P03P8Z  
Features  
G (4)  
P−Channel  
MOSFET  
• Ultra Low R  
to Improve System Efficiency  
• Advanced Package Technology in 3.3 x 3.3 mm for Space Saving  
DS(on)  
and Excellent Thermal Conduction  
D (5, 6, 7, 8)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAMS  
Typical Applications  
1
1
• Power Load Switch  
XXXXX  
WDFN8  
(m8FL)  
CASE 511AB  
AYWWG  
• Protection: Reverse Current, Over Voltage, and Reverse Negative  
G
Voltage  
• Battery Management  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
XXXX  
AYWWG  
G
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
WDFNW8  
(m8FL WF)  
CASE 515AN  
V
DSS  
−30  
"25  
−88.6  
−62.6  
88.2  
44.1  
−17  
V
V
A
Gate−to−Source Voltage  
V
GS  
Continuous Drain Cur-  
Steady  
State  
I
D
T
= 25°C  
= 100°C  
= 25°C  
C
rent R  
(Notes 1, 2)  
q
JC  
T
C
XXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Power Dissipation R  
(Notes 1, 2)  
P
D
W
A
T
C
q
JC  
T
C
= 100°C  
WW  
G
= Work Week  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
Steady  
State  
I
D
T = 25°C  
A
= Pb−Free Package  
q
JA  
T = 100°C  
A
−12  
(Note: Microdot may be in either location)  
Power Dissipation R  
(Notes 1, 2)  
P
D
W
T = 25°C  
3.2  
q
JA  
A
T = 100°C  
A
1.6  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
−353  
A
A
p
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
I
73.5  
88  
A
S
Single Pulse Drain to Source Avalanche  
E
AS  
mJ  
Energy (I = 8.5 A)  
L
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.7  
Unit  
°C/W  
°C/W  
Junction−to−Case − Steady State (Drain) (Note 2)  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JC  
R
46.4  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming  
a 76 mm x 76 mm x 1.6 mm board.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
December, 2021 − Rev. 2  
NVTFS015P03P8Z/D  
 
12345678

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