Datasheet > NVTFS070N10MCLTAG

NVTFS070N10MCLTAG

更新时间： 2024-11-06 11:13:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	276K
描述
Single N-Channel Power MOSFET 100 V, 13 A, 64.4 mΩ

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(on)

65 mW @ 10 V

90 mW @ 4.5 V

100 V

13 A

100 V, 65 mW, 13 A

N−Channel

D (5 − 8)

NVTFS070N10MCL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFWS070N10MCL − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

S (1, 2, 3)

MARKING

DIAGRAM

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

WDFN8

(m8FL)

CASE 511AB

XXXXX

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

AYWWG

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

XXXX

AYWWG

9.0

(Notes 1, 2, 3)

Steady

State

Power Dissipation

WDFNW8

(u8FL WF)

CASE 515AN

(Notes 1, 2)

= 100°C

Continuous Drain

Current R

T = 25°C

4.5

3.2

2.9

1.5

T = 100°C

(Notes 1, 2, 3)

XXXXX = Specific Device Code

Steady

State

= Assembly Location

= Year

Power Dissipation

T = 25°C

(Notes 1, 2)

= Work Week

T = 100°C

= Pb−Free Package

Pulsed Drain Current

= 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Single Pulse Drain−to−Source Avalanche

423

260

°C

Energy (I

= 0.5 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Source Current (Body Diode)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

6.0

Unit

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2022 − Rev. 0

NVTFS070N10MCL/D

12 3 4 5 6 7 8

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