NVTFS4824NTWG

更新时间： 2024-11-05 12:19:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	122K
描述
30 V, 4.7 m, 46 A, Single NâChannel

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NVTFS4824NTWG 数据手册

NVTFS4824N

Power MOSFET

30 V, 4.7 mW, 46 A, Single N−Channel

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

http://onsemi.com

• Low Capacitance to Minimize Driver Losses

• NVTFS4824NWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

4.7 mW @ 10 V

7.5 mW @ 4.5 V

• These Devices are Pb−Free and are RoHS Compliant

30 V

46 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

N−Channel

D (5 − 8)

DSS

Gate−to−Source Voltage

"20

Continuous Drain Cur-

= 25°C

rent R

(Notes 1,

J−mb

= 100°C

2, 3, 4)

G (4)

Steady

State

Power Dissipation

= 25°C

(Notes 1, 2, 3)

J−mb

S (1, 2, 3)

= 100°C

Continuous Drain Cur-

T = 25°C

18.2

MARKING DIAGRAM

rent R

& 4)

(Notes 1, 3,

T = 100°C

12.8

Steady

State

Power Dissipation

(Notes 1, 3)

T = 25°C

3.2

1.6

402

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

XXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 50 V, V = 10 V,

= Pb−Free Package

= 38 A, L = 0.1 mH, R = 25 W)

L(pk)

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2 and 3)

7.2

°C/W

J−mb

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

May, 2013 − Rev. 2

NVTFS4824N/D

12 3 4 5 6

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NVTFS4824NTWG 替代型号

型号	品牌	替代类型	描述	数据表
FDBL86210-F085	ONSEMI	功能相似	150 V、169 A、5 mΩ、TO-LLN 沟道 PowerTrench®

与NVTFS4824NTWG相关器件

型号	品牌	获取价格	描述	数据表
NVTFS4824NWFTAG	ONSEMI	获取价格	30 V, 4.7 m, 46 A, Single NâChannel
NVTFS4824NWFTWG	ONSEMI	获取价格	30 V, 4.7 m, 46 A, Single NâChannel
NVTFS4C02N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 8FL
NVTFS4C02NTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 8FL
NVTFS4C02NWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 8FL
NVTFS4C05N	ONSEMI	获取价格	Single N- Channel Power MOSFET
NVTFS4C05NTAG	ONSEMI	获取价格	Single N- Channel Power MOSFET
NVTFS4C05NWFTAG	ONSEMI	获取价格	Single N- Channel Power MOSFET
NVTFS4C06N	ONSEMI	获取价格	Single N- Channel Power MOSFET
NVTFS4C06NTAG	ONSEMI	获取价格	Single N- Channel Power MOSFET

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