Datasheet > NVTFS4C13N_17

NVTFS4C13N_17

更新时间： 2024-11-10 01:01:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	89K
描述
Power MOSFET

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中文翻译

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NVTFS4C13N_17 数据手册

NVTFS4C13N

Power MOSFET

30 V, 9.4 mW, 40 A, Single N−Channel,

m8FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVTFS4C13NWF − Wettable Flanks Product

• NVT Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

www.onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

9.4 mW @ 10 V

14 mW @ 4.5 V

30 V

40 A

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

Current R

T = 25°C

S (1,2,3)

N−CHANNEL MOSFET

T = 100°C

(Notes 1, 2, 4)

T = 25°C

3.0

1.5

Power Dissipation R

(Note 1, 2, 4)

MARKING DIAGRAM

T = 100°C

Steady

State

Continuous Drain

= 25°C

Current R

3, 4)

(Note 1,

XXXX

AYWWG

= 100°C

WDFN8

(m8FL)

CASE 511AB

Power Dissipation

(Note 1, 3, 4)

= 25°C

= 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

152

4C13

= Specific Device Code for

NVMTS4C13N

Operating Junction and Storage Temperature

T ,

−55 to

+175

°C

stg

13WF = Specific Device Code of

NVTFS4C13NWF

Source Current (Body Diode)

= Assembly Location

= Year

= Work Week

Single Pulse Drain−to−Source Avalanche Energy

(T = 25°C, I = 14 A , L = 0.1 mH)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Pb−Free Package

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

THERMAL RESISTANCE MAXIMUM RATINGS

See detailed ordering and shipping information on page 5 of

this data sheet.

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Notes 1 and 4)

5.8

°C/W

Junction−to−Ambient – Steady State

(Notes 1 and 2)

1. The entire application environment impacts the thermal resistance values

shown, they are not constants and are only valid for the particular conditions

noted.

2. Surface−mounted on FR4 board using a 650 mm 2 oz. Cu pad.

3. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

4. Continuous DC current rating. Maximum current for pulses as long as

1 second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

January, 2017 − Rev. 2

NVTFS4C13N/D

12 3 4 5 6

中文翻译

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与NVTFS4C13N_17相关器件

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NVTFS4C13NTAG	ONSEMI	获取价格	Power MOSFET
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NVTFS4C13NWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS4C13NWFTWG	ONSEMI	获取价格	Power MOSFET
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