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NVTFS5811NLWFTWG

更新时间： 2024-11-22 01:13:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 126K
描述
Power MOSFET

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NVTFS5811NLWFTWG 数据手册

 浏览型号NVTFS5811NLWFTWG的Datasheet PDF文件第2页浏览型号NVTFS5811NLWFTWG的Datasheet PDF文件第3页浏览型号NVTFS5811NLWFTWG的Datasheet PDF文件第4页浏览型号NVTFS5811NLWFTWG的Datasheet PDF文件第5页浏览型号NVTFS5811NLWFTWG的Datasheet PDF文件第6页 
NVTFS5811NL  
Power MOSFET  
40 V, 6.7 mW, 40 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVTFS5811NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
6.7 mW @ 10 V  
10 mW @ 4.5 V  
• These Devices are Pb−Free and are RoHS Compliant  
40 V  
40 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
N−Channel MOSFET  
D (5−8)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
40  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
28  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
P
21  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
10  
S (1,2,3)  
Continuous Drain Cur-  
T = 25°C  
I
D
16  
A
rent R  
3, 4)  
(Notes 1 &  
MARKING DIAGRAM  
q
JA  
T = 100°C  
A
11  
Steady  
State  
1
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.2  
1.6  
354  
W
A
D
S
S
S
G
D
D
D
D
1
R
q
JA  
XXXX  
AYWWG  
G
T = 100°C  
A
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXX = Specific Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Source Current (Body Diode)  
I
17  
65  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
= Pb−Free Package  
I
= 36 A, L = 1.0 mH, R = 25 W)  
L(pk)  
G
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Note 2 and 3)  
R
7.2  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 2  
NVTFS5811NL/D  
 
123456

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NVTFS5811NLWFTWG 替代型号

型号 品牌 替代类型 描述 数据表
NVTFS5811NLWFTAG ONSEMI

完全替代

 Power MOSFET
NVTFS5811NLTAG ONSEMI

类似代替

 Power MOSFET 40 V, 6.7 m, 40 A, Single N?Channel Small Footprint
NVTFS5811NLTWG ONSEMI

类似代替

 Power MOSFET 40 V, 6.7 m, 40 A, Single N?Channel Small Footprint

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