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NVTFS5820NL

更新时间： 2024-11-25 10:30:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 111K
描述
60 V, 11.5 m, Single N?Channel, 8FL Power MOSFET

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NVTFS5820NL 数据手册

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NVTFS5820NL  
Power MOSFET  
60 V, 11.5 mW, Single N−Channel, m8FL  
Features  
• Small Footprint (3.3x3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• AEC−Q101 Qualified  
• These are Pb−Free Devices*  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
11.5 mW @ 10 V  
15 mW @ 4.5 V  
60 V  
29 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
N−Channel  
Gate−to−Source Voltage  
V
"20  
29  
V
GS  
D
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
20  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
21  
10  
11  
W
A
D
G
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
S
A
D
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
8.0  
Steady  
State  
MARKING DIAGRAM  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.2  
1.6  
247  
70  
W
A
D
1
R
q
JA  
T = 100°C  
A
1
S
S
S
G
D
D
D
D
5820  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
A
p
DM  
I
DmaxPkg  
Current limited by package  
(Note 4)  
T = 25°C  
A
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
5820  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
175  
Source Current (Body Diode)  
I
S
17  
48  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 37 A, L = 0.1 mH, R = 25 W)  
(Note: Microdot may be in either location)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NVTFS5820NLTAG  
WDFN8  
(Pb−Free)  
1500/Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
NVTFS5820NLTWG WDFN8  
5000/Tape &  
Reel  
Parameter  
Symbol  
Value  
Unit  
(Pb−Free)  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
7.3  
°C/W  
Y
J−mb  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2011 − Rev. 1  
NVTFS5820NL/D  
 
123456

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