Datasheet > NVTFS5124PLWFTWG

NVTFS5124PLWFTWG

更新时间： 2024-11-26 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	217K
描述
单 P 沟道功率 MOSFET -60V，-8A，260mΩ

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NVTFS5124PLWFTWG 数据手册

NVTFS5124PL

MOSFET – Power, Single

P-Channel

-60 V, -6 A, 260 mW

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

http://onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(on)

• NVTFS5124PLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

260 mW @ −10 V

380 mW @ −4.5 V

−60 V

−6 A

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

P−Channel MOSFET

D (5−8)

Parameter

Drain−to−Source Voltage

Symbol

Value

−60

Unit

DSS

Gate−to−Source Voltage

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

−6.0

−4.0

rent R

(Notes 1,

J−mb

G (4)

2, 3, 4)

Steady

State

Power Dissipation

S (1,2,3)

(Notes 1, 2, 3)

J−mb

= 100°C

9.0

MARKING DIAGRAM

Continuous Drain Cur-

T = 25°C

−2.4

−1.7

3.0

rent R

(Notes 1, 3,

T = 100°C

Steady

State

XXXX

AYWWG

Power Dissipation

(Notes 1, 3)

T = 25°C

WDFN8

(m8FL)

CASE 511AB

T = 100°C

1.5

Pulsed Drain Current

T = 25°C, t = 10 ms

−24

Operating Junction and Storage Temperature

T , T

−55 to

°C

XXXX = Specific Device Code

stg

+175

= Assembly Location

= Year

Source Current (Body Diode)

−18

= Work Week

= Pb−Free Package

Single Pulse Drain−to−Source Avalanche

8.5

Energy (T = 25°C, V = −50 V, V = −10 V,

(Note: Microdot may be in either location)

= −13 A, L = 0.1 mH, R = 25 W)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Note 2 and 3)

8.4

°C/W

J−mb

Junction−to−Ambient − Steady State (Note 3)

49.2

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

August, 2019 − Rev. 2

NVTFS5124PL/D

12 3 4 5 6 7

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