Datasheet > FDBL86210-F085

FDBL86210-F085

更新时间： 2024-09-14 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	582K
描述
150 V、169 A、5 mΩ、TO-LLN 沟道 PowerTrench®

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中文翻译

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数据手册
替代型号

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FDBL86210-F085 数据手册

MOSFET – N-Channel,

POWERTRENCH⁾

150 V, 169 A, 6.3 mW

FDBL86210-F085

Features

www.onsemi.com

• Typical r

= 5 mꢀ at V = 10 V, I = 80 A

GS D

DS(on)

• Typical Q

= 70 nC at V = 10 V, I = 80 A

GS D

g(tot)

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and are RoHS Compliant

Applications

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

N−Channel

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current − Continuous

Ratings

150

Unit

DSS

H−PSOF8L

CASE 100CU

169

(V = 10), T = 25°C (Note 1)

Pulsed Drain Current, T = 25°C

See Figure 4

502

MARKING DIAGRAM

Single Pulse Avalanche Energy

(Note 2)

Power Dissipation

500

3.3

$Y&Z&3&K

FDBL

86210

Derate Above 25°C

W/°C

°C

T , T

Operating and Storage Temperature

Thermal Resistance Junction to Case

−55 to +175

0.3

STG

°C/W

ꢁ

Maximum Thermal Resistance

Junction to Ambient (Note 3)

ꢁ

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by silicon.

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

2. Starting T = 25°C, L = 0.24 mH, I = 64 A, V = 100 V during inductor

FDBL86210

= Specific Device Code

charging and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

ꢁ

resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design, while R

ꢁ

ORDERING INFORMATION

ꢁ

is determined by the user’s board design. The maximum rating presented

{

Device

Top Mark

Package Shipping

here is based on mounting on a 1 in pad of 2oz copper.

FDBL86210 FDBL86210 H−PSOF8L 2000 Units/

−F085

Tape&Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

June, 2020 − Rev. 4

FDBL86210−F085/D

12 3 4 5 6 7

中文翻译

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FDBL86210-F085 替代型号

型号	品牌	替代类型	描述	数据表
NVTFS4824NTWG	ONSEMI	功能相似	30 V, 4.7 m, 46 A, Single NâChannel
NVTFS5826NLTWG	ONSEMI	功能相似	60 V, 24 m, 20 A, Single NâChannel
NTHS5404T1G	ONSEMI	功能相似	Power MOSFET

与FDBL86210-F085相关器件

型号	品牌	获取价格	描述	数据表
FDBL86361-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，300A，1.4mΩ
FDBL86363-F085	ONSEMI	获取价格	80 V、240 A、2.0 mΩ、TO-LLN 沟道 PowerTrench®
FDBL86366-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，220A，3.0mΩ
FDBL86561-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，300A，1.1mΩ
FDBL86563-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，240A，1.5mΩ
FDBL86566-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，240A，2.4mΩ
FDBL9401-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，300A，0.5mΩ
FDBL9401-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ
FDBL9401L-F085	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，300 A，0.55
FDBL9403-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，240 A，0.9 mΩ

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