Datasheet > NVTFS016N06CT1G

NVTFS016N06CT1G

更新时间： 2024-11-06 11:11:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	293K
描述
Power MOSFET, Single, N-Channel, µ8FL, 60 V, 16.3 mΩ, 32 A

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NVTFS016N06CT1G 数据手册

MOSFET - Power, Single

N-Channel, m8FL

60 V, 16.3 mW, 32 A

NVTFS016N06C

Features

www.onsemi.com

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVTFWS016N06C − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(on)

60 V

16.3 mW @ 10 V

32 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

N−Channel

D (5 − 8)

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

G (4)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

S (1, 2, 3)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

MARKING

DIAGRAMS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

XXXX

AYWWG

Steady

State

Power Dissipation

T = 25°C

2.5

1.2

160

(Notes 1, 2)

WDFNW8

(Full−Cut m8FL)

CASE 515AN

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

XXXX = Specific Device Code

+175

= Assembly Location

= Year

Source Current (Body Diode)

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 6.6 A)

L(pk)

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

November, 2020 − Rev. 1

NVTFS016N06C/D

12 3 4 5 6 7 8

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与NVTFS016N06CT1G相关器件

型号	品牌	获取价格	描述	数据表
NVTFS016N06CTAG	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS020N06CTAG	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS024N06CT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, µ8FL,
NVTFS024N06CTAG	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, µ8FL,
NVTFS027N10MCLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 28 A, 26
NVTFS030N06CTAG	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS040N10MCLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 28 A, 26
NVTFS052P04M8LTAG	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40V, 69mΩ, -
NVTFS070N10MCLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 13 A, 64
NVTFS4823N	ONSEMI	获取价格	Power MOSFET 30 V, 10.5 m, 30 A, Single N?Channel

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