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NVTFS030N06CTAG PDF预览

NVTFS030N06CTAG

更新时间: 2024-11-06 11:11:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 294K
描述
Power MOSFET, Single, N-Channel, µ8FL, 60 V, 29.7 mΩ, 19 A

NVTFS030N06CTAG 数据手册

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MOSFET - Power, Single  
N-Channel, m8FL  
60 V, 29.7 mW, 19 A  
NVTFS030N06C  
Features  
www.onsemi.com  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
NVTFWS030N06C Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
60 V  
29.7 mW @ 10 V  
19 A  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
NChannel  
D (5 8)  
Typical Applications  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
G (4)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S (1, 2, 3)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
20  
19  
13  
23  
11  
Unit  
V
V
DSS  
MARKING  
DIAGRAMS  
GatetoSource Voltage  
V
GS  
V
1
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
1
S
S
S
D
D
D
D
q
JC  
T
C
XXXX  
AYWWG  
G
(Notes 1, 3)  
WDFN8  
(m8FL)  
CASE 511AB  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
G
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
I
6
A
D
q
JA  
T = 100°C  
A
4
(Notes 1, 2, 3)  
Steady  
State  
XXXX  
AYWWG  
G
Power Dissipation  
T = 25°C  
A
P
2.5  
1.2  
86  
W
D
R
(Notes 1, 2)  
q
JA  
WDFNW8  
(FullCut m8FL)  
CASE 515AN  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
J
stg  
XXXX = Specific Device Code  
+175  
A
Y
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
19  
11  
A
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 4.6 A)  
L(pk)  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
November, 2020 Rev. 1  
NVTFS030N06C/D  
 

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