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NVTFS004N04CTAG

更新时间： 2024-02-11 16:58:05
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 303K
描述
单 N 沟道，功率 MOSFET，40V，77A，4.9mΩ

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NVTFS004N04CTAG 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：6 weeks
风险等级：5.69峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NVTFS004N04CTAG 数据手册

 浏览型号NVTFS004N04CTAG的Datasheet PDF文件第2页浏览型号NVTFS004N04CTAG的Datasheet PDF文件第3页浏览型号NVTFS004N04CTAG的Datasheet PDF文件第4页浏览型号NVTFS004N04CTAG的Datasheet PDF文件第5页浏览型号NVTFS004N04CTAG的Datasheet PDF文件第6页浏览型号NVTFS004N04CTAG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single,  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
40 V  
4.9 mW @ 10 V  
77 A  
40 V, 4.9 mW, 77 A  
N−Channel  
NVTFS004N04C  
D (5 − 8)  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
G (4)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NVTFWS004N04C − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
S (1, 2, 3)  
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
WDFN8 3.3x3.3, 0.65P  
CASE 511AB  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
(Notes 1, 2, 3, 4)  
Steady  
State  
T
T
= 25°C  
I
D
77  
A
C
q
JC  
= 100°C  
43  
C
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)  
Power Dissipation  
T
T
= 25°C  
P
55  
18  
18  
W
A
CASE 515AN  
C
D
R
(Notes 1, 2, 3)  
q
JC  
= 100°C  
C
Continuous Drain  
Current R  
Steady T = 25°C  
I
D
A
State  
q
JA  
MARKING DIAGRAM  
T = 100°C  
A
13  
(Notes 1, 3, 4)  
1
S
S
S
G
D
D
D
D
Power Dissipation  
T = 25°C  
P
3.2  
1.6  
338  
W
A
D
XXXX  
AYWWG  
G
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
= Work Week  
Source Current (Body Diode)  
I
45.5  
122  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
WW  
G
Energy (I  
= 5.2 A)  
= Pb−Free Package  
L(pk)  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from Case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
2.7  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
q
JC  
R
47.4  
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2022 − Rev. 1  
NVTFS004N04C/D  
 
12345678

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