5秒后页面跳转
捷配首页

Datasheet > NVTFS008N04CTAG
NVTFS008N04CTAG PDF预览

NVTFS008N04CTAG

更新时间： 2024-11-06 11:10:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 229K
描述
Power MOSFET, Single N-Channel, 40 V, 7.1 mOhms, 48 A

阅读下载

中文翻译

获取价格

NVTFS008N04CTAG 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：6 weeks
风险等级：5.76JESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：NOT SPECIFIED
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NVTFS008N04CTAG 数据手册

 浏览型号NVTFS008N04CTAG的Datasheet PDF文件第2页浏览型号NVTFS008N04CTAG的Datasheet PDF文件第3页浏览型号NVTFS008N04CTAG的Datasheet PDF文件第4页浏览型号NVTFS008N04CTAG的Datasheet PDF文件第5页浏览型号NVTFS008N04CTAG的Datasheet PDF文件第6页浏览型号NVTFS008N04CTAG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
40 V, 7.1 mW, 48 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
40 V  
8.5 mW @ 10 V  
48 A  
NVTFS008N04C  
N−Channel  
D (5 − 8)  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NVTFWS008N04C − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
G (4)  
S (1, 2, 3)  
• These Devices are Pb−Free and are RoHS Compliant  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
1
WDFN8  
CASE 511AB  
V
DSS  
S
S
S
D
D
D
D
1
XXXX  
AYWWG  
G
Gate−to−Source Voltage  
V
GS  
20  
V
WDFNW8  
CASE 515AN  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
48  
A
G
C
D
q
JC  
T
C
27  
(Notes 1, 2, 3, 4)  
Steady  
State  
XXXX = Specific Device Code  
Power Dissipation  
T
C
P
38  
W
A
D
A
Y
WW  
G
= Assembly Location  
= Year  
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
12  
= Work Week  
Continuous Drain  
Current R  
T = 25°C  
I
14  
= Pb−Free Package  
(Note: Microdot may be in either location)  
A
D
q
JA  
T = 100°C  
A
10  
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.1  
1.5  
193  
W
D
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
31  
75  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 2.9 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
4
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
48.6  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
September, 2021 − Rev. 2  
NVTFS008N04C/D  
 
12345678

中文翻译

下载PDF

与NVTFS008N04CTAG相关器件

型号 品牌 获取价格 描述 数据表
NVTFS010N10MCLTAG ONSEMI

获取价格

 		单 N 沟道功率 MOSFET 100V，53A，10.3mΩ
NVTFS012P03P8ZTAG ONSEMI

获取价格

 		Power MOSFET, Single, P-Channel, WDFN6, -30 V
NVTFS014P04M8LTAG ONSEMI

获取价格

 		Power MOSFET, Single P-Channel, -40 V, 13.8 m
NVTFS015N04CTAG ONSEMI

获取价格

 		单 N 沟道，功率 MOSFET，40V，27A，17.3mΩ
NVTFS015P03P8ZTAG ONSEMI

获取价格

 		Power MOSFET, Single, P-Channel, µ8FL -30 V,
NVTFS016N06CT1G ONSEMI

获取价格

 		Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS016N06CTAG ONSEMI

获取价格

 		Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS020N06CTAG ONSEMI

获取价格

 		Power MOSFET, Single, N-Channel, µ8FL, 60 V,
NVTFS024N06CT1G ONSEMI

获取价格

 		Power MOSFET, Single, N-Channel, µ8FL,
NVTFS024N06CTAG ONSEMI

获取价格

 		Power MOSFET, Single, N-Channel, µ8FL,

与NVTFS008N04CTAG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证