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NVH4L070N120M3S PDF预览

NVH4L070N120M3S

更新时间： 2024-11-06 11:13:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 353K
描述
Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L

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NVH4L070N120M3S 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
65 mohm, 1200ꢀV, M3S,  
TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
87 mW @ 18 V  
34 A  
D
NVH4L070N120M3S  
Features  
G
S1: Driver Source  
S2: Power Source  
• Typ. R  
= 65 mW @ V = 18 V  
GS  
DS(on)  
S1  
S2  
• Ultra Low Gate Charge (Q  
= 57 nC)  
G(tot)  
N−CHANNEL MOSFET  
• High Speed Switching with Low Capacitance (C = 57 pF)  
oss  
• 100% Avalanche Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
D
Typical Applications  
S2  
S1  
• Automotive On Board Charger  
• Automotive DC−DC Converter for EV/HEV  
G
TO−247−4L  
CASE 340CJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
V
DSS  
1200  
−10/+22  
−3/+18  
V
V
V
V
GS  
Recommended Operation Values T <175°C  
of Gate−to−Source Voltage  
V
GSop  
C
H4L070  
120M3S  
AYWWZZ  
Continuous Drain  
Current (Notes 1, 3)  
Steady  
State  
T =25°C  
C
I
D
34  
160  
24  
A
W
A
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Notes 1, 3)  
Steady T =100°C  
State  
I
D
C
H4L070120M3S = Specific Device Code  
Power Dissipation  
(Note 1)  
P
80  
W
A
D
A
Y
= Assembly Location  
= Year  
Pulsed Drain Current  
(Note 2)  
T
C
= 25°C  
I
98  
DM  
WW = Work Week  
ZZ  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
J
−55 to  
+175  
°C  
A
stg  
Source Current (Body Diode)  
I
S
31  
91  
ORDERING INFORMATION  
T
C
= 25°C, V = −3 V  
GS  
Device  
Package  
Shipping  
Single Pulse Drain−to−Source Avalanche  
Energy (Note 4)  
E
AS  
mJ  
°C  
NVH4L070N120M3S TO−247−4L  
30 Units /  
Tube  
Maximum Lead Temperature for Soldering  
(1/25″ from case for 10 s)  
T
270  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. The maximum current rating is based on typical R  
performance.  
AS  
DS(on)  
4. EAS of 91 mJ is based on starting T = 25°C; L = 1 mH, I = 13.5 A,  
J
V
= 100 V, V = 18 V.  
GS  
DD  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
March, 2023 − Rev. 0  
NVH4L070N120M3S/D  
 
12345678

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