Datasheet > NVH4L080N120SC1

NVH4L080N120SC1

更新时间： 2024-11-20 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	406K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L

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NVH4L080N120SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 80 mohm,

1200ꢀV, M1, TO-247-4L

TYP

I MAX

DSS

DS(ON)

1200 V

80 mW

29 A

N−CHANNEL MOSFET

NVH4L080N120SC1

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

S1: Kelvin Source

S2: Power Source

S1 S2

Features

• 1200 V @ T = 175°C

• Max R

= 110 mW at V = 20 V, I = 20 A

GS D

DS(on)

• High Speed Switching with Low Capacitance

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

TO−247−4LD

CASE 340CJ

Applications

MARKING DIAGRAM

• Automotive Auxiliary Motor Drive

• Automotive On Board Charger

• Automotive DC−DC Converter for EV/HEV

AYWWZZ

NVH4L080

N120SC1

= Assembly Location

= Year

= Work Week

= Lot Traceability

NVH4L080N120SC1 = Specific Device Code

ORDERING INFORMATION

Device

Package

Shipping

30 Units /

Tube

TO−247−4L

NVH4L080N120SC1

Publication Order Number:

May, 2022− Rev. 2

NVH4L080N120SC1/D

12 3 4 5 6 7 8

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