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NVH4L160N120SC1 PDF预览

NVH4L160N120SC1

更新时间： 2024-11-20 11:15:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 353K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

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NVH4L160N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 160 mohm,  
1200ꢀV, M1, TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
224 mW @ 20 V  
17.3 A  
D
NVH4L160N120SC1  
Features  
• Typ. R  
• Ultra Low Gate Charge (Q  
G
= 160 mW  
DS(on)  
S1: Kelvin Source  
S2: Power Source  
= 34 nC)  
G(tot)  
• High Speed Switching with Low Capacitance (C = 49.5 pF)  
oss  
S1 S2  
• 100% Avalanche Tested  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
D
S2  
S1  
G
TO247−4L  
CASE 340CJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
V
DSS  
1200  
−15/+25  
−5/+20  
V
V
V
Gate−to−Source Voltage  
V
GS  
Recommended Operation Values  
of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
C
Continuous Drain  
Current (Note 2)  
Steady  
State  
T
I
D
17.3  
111  
A
W
A
AYWWZZ  
NVH4L160  
N120SC1  
C
Power Dissipation  
(Note 2)  
P
D
Continuous Drain  
Current (Notes 1, 2)  
Steady  
State  
T
C
= 100°C  
I
D
12.3  
55.5  
69  
Power Dissipation  
(Notes 1, 2)  
P
D
W
A
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ = Lot Traceability  
Pulsed Drain Current  
(Note 3)  
T = 25°C  
I
DM  
A
NVH4L160N120SC1 = Specific Device Code  
Single Pulse Surge  
Drain Current Capability  
T = 25°C, t = 10 ms,  
I
140  
A
A
p
DSC  
R
= 4.7 W  
G
ORDERING INFORMATION  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Device  
Package  
Shipping  
Source Current (Body Diode)  
I
S
11  
A
NVH4L160N120SC1  
TO247−4L  
30 Units /  
Tube  
Single Pulse Drain−to−Source Avalanche  
E
AS  
128  
mJ  
Energy (I  
= 16 A, L = 5 mH) (Note 4)  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/8″ from case for 5 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. JA is constant value to follow guide table of LV/HV discrete final datasheet  
generation .  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
3. Repetitive rating, limited by max junction temperature.  
4. EAS of 128 mJ is based on starting T = 25°C; L = 5 mH, I = 16 A,  
J
AS  
V
DD  
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NVH4L160N120SC1/D  
 
12345678

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