5秒后页面跳转
捷配首页

Datasheet > NTQD4154ZR2
NTQD4154ZR2 PDF预览

NTQD4154ZR2

更新时间： 2024-11-27 21:21:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 192K
描述
7.5A, 20V, 0.019ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, CASE 948S-01, TSSOP-8

阅读下载

中文翻译

获取价格

NTQD4154ZR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSSOP包装说明：PLASTIC, CASE 948S-01, TSSOP-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.36
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：20 V
最大漏极电流 (ID)：7.5 A最大漏源导通电阻：0.019 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTQD4154ZR2 数据手册

 浏览型号NTQD4154ZR2的Datasheet PDF文件第2页浏览型号NTQD4154ZR2的Datasheet PDF文件第3页浏览型号NTQD4154ZR2的Datasheet PDF文件第4页浏览型号NTQD4154ZR2的Datasheet PDF文件第5页浏览型号NTQD4154ZR2的Datasheet PDF文件第6页 
NTQD4154Z  
Power MOSFET  
20 V, 7.5 A, Common−Drain,  
Dual N−Channel TSSOP−8  
Features  
http://onsemi.com  
• Common Drain for Ease of Circuit Connection  
V
R
Typ  
I Max  
D
• Low R  
Extending Battery Life  
(BR)DSS  
DS(on)  
DS(on)  
• ESD Protected Gate  
• Pb−Free Package is Available  
15 mW @ 4.5 V  
21 mW @ 2.5 V  
20 V  
7.5 A  
Applications  
• Li−Ion Battery Protection Circuit  
N−Channel  
N−Channel  
D
D
• Power Management in Portable and Battery−Powered Products  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
250 W  
250 W  
V
DSS  
20  
±12  
7.5  
V
V
A
G1  
G2  
Gate−to−Source Voltage  
V
GS  
S1  
S2  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
A
T = 75°C  
A
5.8  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Power Dissipation  
(Note 1)  
T = 25°C  
P
1.52  
W
A
A
D
D
D D D  
8
Continuous Drain  
Current (Note 2)  
t ≤ 10 s T = 25°C  
I
D
9.8  
7.6  
2.6  
A
T = 75°C  
A
54Z  
YWW  
A G  
1
Power Dissipation  
(Note 2)  
t ≤ 10 s T = 25°C  
P
D
W
A
TSSOP−8  
CASE 948S  
PLASTIC  
Pulsed Drain Current  
tp = 10 ms  
I
30  
A
DM  
1
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
S1  
G1 S2 G2  
T
STG  
54Z  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Source Current (Body Diode)  
I
2.2  
A
S
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
260  
°C  
T
L
THERMAL RESISTANCE RATINGS  
Parameter  
ORDERING INFORMATION  
Symbol  
Max  
82  
Units  
†
Device  
NTQD4154ZR2  
Package  
Shipping  
Junction−to−Ambient – Steady State  
Junction−to−Ambient − t ≤ 10 s  
R
°C/W  
q
JA  
R
48  
TSSOP−8  
4000 / Tape & Reel  
4000 / Tape & Reel  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted onto a 2″ square FR−4 board  
NTQD4154ZR2G TSSOP−8  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(1 in sq, 2 oz. cu. 0.06″ thick single−sided), steady state.  
2. Mounted onto a 2″ square FR−4 board  
(1 in sq, 2 oz. cu. 0.06″ thick single−sided), t ≤ 10 s.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 3  
NTQD4154Z/D  
 
123456

中文翻译

下载PDF

与NTQD4154ZR2相关器件

型号 品牌 获取价格 描述 数据表
NTQD4154ZR2G ROCHESTER

获取价格

 		7.5A, 20V, 0.019ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, PLASTIC, CASE 948
NTQD4154ZR2G ONSEMI

获取价格

 		7.5A, 20V, 0.019ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, PLASTIC, CASE 948
NTQD6866 ONSEMI

获取价格

 		4700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSSOP-8
NTQD6866/D ETC

获取价格

 		Power MOSFET 5.8 Amps， 20 Volts
NTQD6866R2 ONSEMI

获取价格

 		Power MOSFET 6.9 Amps, 20 Volts
NTQD6866R2G ONSEMI

获取价格

 		Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8
NTQD6866T1 ONSEMI

获取价格

 		4300mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSSOP-8
NTQD6968 ONSEMI

获取价格

 		Power MOSFET 6.6 Amps, 20 Volts
NTQD6968N ONSEMI

获取价格

 		Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8
NTQD6968N ROCHESTER

获取价格

 		6.2A, 20V, 0.03ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, CASE 948S-01, TSSOP-

与NTQD4154ZR2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证