Datasheet > NTQS6463/D

NTQS6463/D

更新时间： 2024-11-23 23:55:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	52K
描述
Power MOSFET 6.2 Amps， 20 Volts

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NTQS6463/D 数据手册

NTQS6463

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Power MOSFET

6.2 Amps, 20 Volts

P–Channel TSSOP–8

Features

http://onsemi.com

• New Low Profile TSSOP–8 Package

• Ultra Low R

DS(on)

6.2 AMPERES

20 VOLTS

= 20 mΩ

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• I

and V Specified at Elevated Temperatures

DSS

DS(on)

P–Channel

Applications

• Power Management in Portable and Battery–Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular and Cordless

Telephones

• Lithium Ion Battery Applications

• Note Book PC

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

secs

Steady

State

Unit

Vdc

Adc

MARKING

DIAGRAM

Drain–to–Source Voltage

Gate–to–Source Voltage

Continuous Drain Current

– T = 150°C (Note 1.)

– T = 25°C

–20

"12

TSSOP–8

CASE 948S

PLASTIC

463

YWW

"7.4

"5.9

"6.2

"4.9

– T = 70°C

Pulsed Drain Current (10 µs

Pulse Width)

"30

Apk

Adc

= Year

= Work Week

= MOSFET

Continuous Source Current

(Diode Conduction) (Note 1.)

–1.35

–0.95

PIN ASSIGNMENT

Maximum Power Dissipation

(Note 1.)

– T = 25°C

1.5

1.0

1.05

0.67

– T = 70°C

Operating Junction and Storage

Temperature Range

T , T

stg

–55 to +150

°C

Single Pulse Drain–to–Source

Avalanche Energy – Starting

1.38

Top View

T = 25°C

= 50 V, I = 16.3 Apk,

ORDERING INFORMATION

L = 10 mH)

1. Surface mounted to 1″ x 1″ FR–4 board.

Device

Package

Shipping

NTQS6463

TSSOP–8

100 Units/Rail

NTQS6463R2

TSSOP–8 3000/Tape & Reel

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 0

NTQS6463/D

12 3 4

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