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NTR0202PLT3G PDF预览

NTR0202PLT3G

更新时间: 2024-11-23 22:24:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 58K
描述
Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package

NTR0202PLT3G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.16Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.4 A最大漏极电流 (ID):0.4 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTR0202PLT3G 数据手册

 浏览型号NTR0202PLT3G的Datasheet PDF文件第2页浏览型号NTR0202PLT3G的Datasheet PDF文件第3页浏览型号NTR0202PLT3G的Datasheet PDF文件第4页浏览型号NTR0202PLT3G的Datasheet PDF文件第5页浏览型号NTR0202PLT3G的Datasheet PDF文件第6页 
NTR0202PL  
Power MOSFET  
−20 V, 400 mA, P−Channel  
SOT−23 Package  
Features  
Low R  
Provides Higher Efficiency and Extends Battery Life  
http://onsemi.com  
DS(on)  
R
R
= 0.80 W, V = −10 V  
GS  
DSon  
DSon  
= 1.10 W, V = −4.5 V  
GS  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Miniature SOT−23 Surface Mount Package Saves Board Space  
Pb−Free Package is Available  
−20 V  
550 mW @ −10 V  
−400 mA  
Applications  
P−Channel  
D
DC−DC Converters  
Computers  
Printers  
PCMCIA Cards  
Cellular and Cordless Telephones  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Rating  
Symbol  
Value  
−20  
Unit  
V
Drain−to−Source Voltage  
V
DSS  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Gate−to−Source Voltage − Continuous  
V
$20  
V
GS  
Continuous Drain Current @ T = 25°C  
I
−0.4  
−1.0  
A
A
D
3
Pulsed Drain Current (t 10 ms)  
I
p
DM  
3
Drain  
Total Power Dissipation @ T = 25°C (Note 1)  
P
225  
mW  
A
D
1
2
Operating and Storage Temperature Range  
T , T  
− 55 to  
150  
°C  
J
stg  
PLW  
SOT−23  
CASE 318  
STYLE 21  
Thermal Resistance − Junction−to−Ambient  
R
556  
260  
°C/W  
°C  
q
JA  
1
Gate  
2
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 s  
T
L
Source  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
PL  
W
= Specific Device Code  
= Work Week  
ORDERING INFORMATION  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.  
Device  
Package  
Shipping  
NTR0202PLT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
NTR0202PLT1G SOT−23  
(Pb−Free)  
NTR0202PLT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
NTR0202PLT3G SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 2  
NTR0202PL/D  
 

NTR0202PLT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTR0202PLT1G ONSEMI

类似代替

Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
NTR0202PLT1 ONSEMI

类似代替

Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
MMBF0202PLT1 ONSEMI

功能相似

Power MOSFET 300 mAmps, 20 Volts

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