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NTR0202PLT1G PDF预览

NTR0202PLT1G

更新时间: 2024-11-26 22:24:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 58K
描述
Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package

NTR0202PLT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.57
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:226851Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-08-31 09:27:41
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.4 A
最大漏极电流 (ID):0.4 A最大漏源导通电阻:0.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTR0202PLT1G 数据手册

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NTR0202PL  
Power MOSFET  
−20 V, 400 mA, P−Channel  
SOT−23 Package  
Features  
Low R  
Provides Higher Efficiency and Extends Battery Life  
http://onsemi.com  
DS(on)  
R
R
= 0.80 W, V = −10 V  
GS  
DSon  
DSon  
= 1.10 W, V = −4.5 V  
GS  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Miniature SOT−23 Surface Mount Package Saves Board Space  
Pb−Free Package is Available  
−20 V  
550 mW @ −10 V  
−400 mA  
Applications  
P−Channel  
D
DC−DC Converters  
Computers  
Printers  
PCMCIA Cards  
Cellular and Cordless Telephones  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Rating  
Symbol  
Value  
−20  
Unit  
V
Drain−to−Source Voltage  
V
DSS  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Gate−to−Source Voltage − Continuous  
V
$20  
V
GS  
Continuous Drain Current @ T = 25°C  
I
−0.4  
−1.0  
A
A
D
3
Pulsed Drain Current (t 10 ms)  
I
p
DM  
3
Drain  
Total Power Dissipation @ T = 25°C (Note 1)  
P
225  
mW  
A
D
1
2
Operating and Storage Temperature Range  
T , T  
− 55 to  
150  
°C  
J
stg  
PLW  
SOT−23  
CASE 318  
STYLE 21  
Thermal Resistance − Junction−to−Ambient  
R
556  
260  
°C/W  
°C  
q
JA  
1
Gate  
2
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 s  
T
L
Source  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
PL  
W
= Specific Device Code  
= Work Week  
ORDERING INFORMATION  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.  
Device  
Package  
Shipping  
NTR0202PLT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
NTR0202PLT1G SOT−23  
(Pb−Free)  
NTR0202PLT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
NTR0202PLT3G SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 2  
NTR0202PL/D  
 

NTR0202PLT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTR0202PLT3G ONSEMI

类似代替

Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
NTR0202PLT1 ONSEMI

类似代替

Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
BSH201,215 NXP

功能相似

BSH201 - P-channel vertical D-MOS logic level FET TO-236 3-Pin

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