MOSFET – Power,
N-Channel, SUPERFET) III
800 V, 360 mW, 13 A
NTPF360N80S3Z
Description
www.onsemi.com
800 V SUPERFET III MOSFET is ON Semiconductor’s high
performance MOSFET family offering 800 V breakdown voltage.
New 800 V SUPERFET III MOSFET which is optimized for
primary switch of flyback converter, enables lower switching losses
and case temperature without sacrificing EMI performance thanks to
its optimized design. In addition, internal Zener Diode significantly
improves ESD capability.
This new family of 800 V SUPERFET III MOSFET enables to
make more efficient, compact, cooler and more robust applications
because of its remarkable performance in switching power
applications such as Laptop adapter, Audio, Lighting, ATX power and
industrial power supplies.
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
800 V
360 mW
13 A
D
G
Features
• Typ. R
= 300 mW
DS(on)
S
• Ultra Low Gate Charge (Typ. Q = 25.3 nC)
g
POWER MOSFET
• Low Stored Energy in Output Capacitance (Eoss = 2.72 mJ @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
G
D
S
Applications
• Adapters / Chargers
• LED Lighting
• AUX Power
• Audio
TO−220
CASE 221D
MARKING DIAGRAM
• Industrial Power
&Z&3&K
NTPF360
N80S3Z
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NTPF360N80S3Z = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 0
NTPF360N80S3Z/D