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NTJD1155LT1G PDF预览

NTJD1155LT1G

更新时间： 2024-01-02 14:48:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
5页 114K
描述
Power MOSFET High Side Load Switch with Level−Shift, P−Channel SC−88

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中文翻译

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NTJD1155LT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-88包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：0.71Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：226823
Samacsys Pin Count：6Samacsys Part Category：Transistor
Samacsys Package Category：SOT23 (6-Pin)Samacsys Footprint Name：SC-88(SOT-363) CASE 419B-02
Samacsys Released Date：2015-08-28 09:03:18Is Samacsys：N
配置：COMPLEX最小漏源击穿电压：8 V
最大漏极电流 (Abs) (ID)：1.3 A最大漏极电流 (ID)：1.3 A
最大漏源导通电阻：0.175 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：0.4 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTJD1155LT1G 数据手册

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NTJD1155L  
Power MOSFET  
8 V, + 1.3 A, High Side Load Switch with  
Level−Shift, P−Channel SC−88  
The NTJD1155L integrates a P and N−Channel MOSFET in a single  
package. This device is particularly suited for portable electronic  
equipment where low control signals, low battery voltages and high  
load currents are needed. The P−Channel device is specifically  
designed as a load switch using ON Semiconductor state−of−the−art  
trench technology. The N−Channel, with an external resistor (R1),  
functions as a level−shift to drive the P−Channel. The N−Channel  
MOSFET has internal ESD protection and can be driven by logic  
signals as low as 1.5 V. The NTJD1155L operates on supply lines from  
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
130 mW @ −4.5 V  
170 mW @ −2.5 V  
260 mW @ −1.8 V  
8.0 V  
1.3 A  
SIMPLIFIED SCHEMATIC  
V
IN  
and V  
ON/OFF.  
4
2,3  
Features  
Q2  
Q1  
• Extremely Low R  
P−Channel Load Switch MOSFET  
• Level Shift MOSFET is ESD Protected  
DS(on)  
6
• Low Profile, Small Footprint Package  
• V Range 1.8 to 8.0 V  
IN  
5
• ON/OFF Range 1.5 to 8.0 V  
• These Devices are Pb−Free and are RoHS Compliant  
1
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
SC−88  
Rating  
Symbol  
Value  
8.0  
Unit  
V
(SOT−363)  
CASE 419B  
STYLE 30  
1
Input Voltage (V  
, P−Ch)  
V
IN  
DSS  
TB M G  
ON/OFF Voltage (V , N−Ch)  
V
8.0  
V
GS  
ON/OFF  
G
TB = Device Code  
Continuous Load Current Steady T = 25°C  
I
L
1.3  
A
A
(Note 1)  
State  
M
G
= Date Code  
= Pb−Free Package  
1
T = 85°C  
A
0.9  
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
D
0.40  
0.20  
3.9  
W
(Note: Microdot may be in either location)  
A
State  
T = 85°C  
A
PIN ASSIGNMENT  
Pulsed Load Current  
t = 10 ms  
p
I
A
LM  
D1/G2 G1 S2  
Operating Junction and Storage Temperature  
T ,  
STG  
−55 to  
150  
°C  
J
6
5
4
T
Source Current (Body Diode)  
I
S
−0.4  
A
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
S1 D2 D2  
Symbol  
Max  
320  
220  
Unit  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Foot – Steady State (Note 1)  
R
°C/W  
q
JA  
ORDERING INFORMATION  
R
q
JF  
†
Device  
NTJD1155LT1G  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 inch sq pad size  
SC−88  
(Pb−Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
(Cu area = 1.127 in sq [1 oz] including traces).  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 − Rev. 5  
NTJD1155L/D  
 
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中文翻译

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NTJD1155LT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTJD1155LT1 ONSEMI

类似代替

 双 P 沟道，高压侧负载开关，带电平移位，功率 MOSFET，-8V，±1.3A，175
NTLJD2105LTBG ONSEMI

功能相似

 POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package

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