Datasheet > NSVJ3910SB3_16

NSVJ3910SB3_16

更新时间： 2024-11-30 01:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	298K
描述
N-Channel JFET

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NSVJ3910SB3_16 数据手册

NSVJ3910SB3

N-Channel JFET

25V, 20 to 40mA, 40mS

www.onsemi.com

Automotive JFET designed for compact and efficient designs and

including high gain performance. AEC-Q101 qualified JFET and PPAP

capable suitable for automotive applications.

ELECTRICAL CONNECTION

N-Channel

Features

 High Forward Transfer Admittance

 High Breakdown Voltage

 Low Input Capacitance

 Low Noise Figure

 Pb-Free and RoHS compliance

 AEC-Q101 qualified and PPAP capable

1 : Source

2 : Drain

3 : Gate

Typical Applications

Low Noise Amplifier for Automotive AM Radio

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)

CPH3

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Symbol

Value

Unit

DSX

GDS

25

MARKING

Drain Current

Allowable Power Dissipation

400

Operating Junction and

Storage Temperature

55 to 150

C

J, stg

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet

April 2016 - Rev. 0

Publication Order Number :

NSVJ3910SB3/D

12 3 4 5

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