Preliminary Data Sheet
NP75P03YDG
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0020EJ0200
Rev.2.00
Mar 16, 2011
The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
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Low on-state resistance
⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −37.5 A)
Low Ciss: Ciss = 3200 pF TYP. (VDS = −25 V, VGS = 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
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Ordering Information
Part No.
NP75P03YDG -E1-AY ∗
NP75P03YDG -E2-AY ∗
LEAD PLATING
PACKING
Tape 2500 p/reel
Package
1
Pure Sn (Tin)
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
1
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
−30
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
m20
V
m75
A
1
Drain Current (pulse) ∗
m225
138
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗
Channel Temperature
W
W
°C
°C
A
2
PT2
1.0
Tch
175
Storage Temperature
Single Avalanche Current ∗
Single Avalanche Energy ∗
Tstg
−55 to +175
27
3
IAS
<R>
<R>
3
EAS
73
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗
Rth(ch-C)
Rth(ch-A)
1.09
150
°C/W
°C/W
2
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
<R>
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0020EJ0200 Rev.2.00
Mar 16, 2011
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