Datasheet > NP75P04YLG

NP75P04YLG

更新时间： 2024-11-13 07:20:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	237K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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NP75P04YLG 数据手册

Preliminary Data Sheet

R07DS0183EJ0200

Rev.2.00

NP75P04YLG

MOS FIELD EFFECT TRANSISTOR

Description

Mar 16, 2011

The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Low on-state resistance

⎯ R_DS(on)= 9.7 mΩ MAX. (V_GS= −10 V, I_D= −37.5 A)

⎯ R_DS(on)= 14 mΩ MAX. (V_GS= −5 V, I_D= −37.5 A)

Logic level drive type

Gate to Source ESD protection diode built in

Designed for automotive application and AEC-Q101 qualified

•

Ordering Information

Part No.

NP75P04YLG -E1-AY ^∗

NP75P04YLG -E2-AY ^∗

LEAD PLATING

PACKING

Tape 2500 p/reel

Package

Pure Sn (Tin)

8-pin HSON, Taping (E1 type)

8-pin HSON, Taping (E2 type)

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

Ratings

−40

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

m20

m75

Drain Current (pulse) ^∗

m225

138

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C) ^∗

Channel Temperature

°C

P_T2

1.0

T_ch

175

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

−55 to +175

I_AS

<R>

E_AS

123

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance ^∗

R_th(ch-C)

R_th(ch-A)

1.09

150

°C/W

Notes: ^∗1. T_C= 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt

*3. Starting T_ch= 25°C, V_DD= −20 V, R_G= 25 Ω, L = 100 μH, V_GS= −20 → 0 V

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R07DS0183EJ0200 Rev.2.00

Mar 16, 2011

Page 1 of 6

12 3 4 5 6 7 8

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