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NP75N04YUG-E1-AY PDF预览

NP75N04YUG-E1-AY

更新时间: 2024-11-13 07:16:59
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 224K
描述
MOS FIELD EFFECT TRANSISTOR

NP75N04YUG-E1-AY 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:HSON包装说明:LEAD FREE, HSON-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.2
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):75 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.0048 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):450 pFJESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):138 W
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NP75N04YUG-E1-AY 数据手册

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Preliminary Data Sheet  
NP75N04YUG  
MOS FIELD EFFECT TRANSISTOR  
Description  
R07DS0018EJ0100  
Rev.1.00  
Jul 01, 2010  
The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.  
Features  
Low on-state resistance  
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)  
Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V)  
Designed for automotive application and AEC-Q101 qualified  
Small size package 8-pin HSON  
Ordering Information  
Part No.  
NP75N04YUG -E1-AY ∗  
NP75N04YUG -E2-AY ∗  
LEAD PLATING  
PACKING  
Tape 2500 p/reel  
Package  
1
Pure Sn (Tin)  
8-pin HSON, Taping (E1 type)  
8-pin HSON, Taping (E2 type)  
1
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)  
Absolute Maximum Ratings (TA = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
40  
20  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
V
75  
A
1
Drain Current (pulse) ∗  
225  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) ∗  
Channel Temperature  
138  
W
W
°C  
°C  
A
2
PT2  
1.0  
Tch  
175  
Storage Temperature  
Repetitive Avalanche Current ∗  
Repetitive Avalanche Energy ∗  
Tstg  
55 to +175  
35  
3
IAR  
3
EAR  
123  
mJ  
Thermal Resistance  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance ∗  
Rth(ch-C)  
Rth(ch-A)  
1.09  
150  
°C/W  
°C/W  
2
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%  
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt  
*3. Tch(peak) 150°C, RG = 25 Ω  
R07DS0018EJ0100 Rev.1.00  
Jul 01, 2010  
Page 1 of 6  

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