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NLAS4717EPMTR2G PDF预览

NLAS4717EPMTR2G

更新时间: 2024-09-13 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
10页 88K
描述
4.5 ohm High Bandwidth, Dual SPDT Analog Switch

NLAS4717EPMTR2G 数据手册

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NLAS4717EP  
4.5 W High Bandwidth, Dual  
SPDT Analog Switch  
The NLAS4717EP is an advanced CMOS analog switch fabricated  
in sub−micron silicon gate CMOS technology. The device is a dual  
independent Single Pole Double Throw (SPDT) switch featuring low  
http://onsemi.com  
MARKING  
R
DS(on)  
of 4.5 at 3.0 V.  
The device also features guaranteed Break−Before−Make (BBM)  
switching, assuring the switches never short the driver.  
The NLAS4717EP is available in two small size packages:  
Microbump: 2.0 x 1.5 mm  
DIAGRAMS  
WQFN−10: 1.4 x 1.8 mm  
4717EP  
AYWWG  
G
A1  
Features  
Microbump−10  
CASE 489AA  
Low R : 4.5 @ 3.0 V  
DS(on)  
A1  
Matching Between the Switches 0.5  
Wide Voltage Range: 1.8 V to 5.5 V  
High Bandwidth > 90 MHz  
A
Y
= Assembly Location  
= Year  
W, WW = Work Week  
G
= Pb−Free Package  
1.65 V to 5.5 V Operating Range  
(Note: Microdot may be in either location)  
Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)  
Ultra−Low Charge Injection 6.0 pC  
AWMG  
Low Standby Current: I = 1.0 nA (Max) @ T = 25°C  
CC  
A
G
*OVT on Pins 4 and 8 (CTRL Logic Pins)  
1
WQFN−10  
CASE 488AQ  
These are Pb−Free Devices  
AW  
M
= Specific Device Code  
= Date Code  
= Pb−Free Device  
Typical Applications  
Cell Phones  
PDAs  
G
(Note: Microdot may be in either location)  
MP3s  
Digital Still Cameras  
USB 2.0 Full Speed (USB1.1) − 12 Mbps Compliant  
FUNCTION TABLE  
IN_  
NO_  
NC_  
0
1
OFF  
ON  
ON  
Important Information  
OFF  
ESD Protection:  
HBM = 2500 V, MM = 200 V  
Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78)  
Pin−to−Pin Compatible with MAX4717  
ORDERING INFORMATION  
Device  
Package  
Shipping  
*OVT  
NLAS4717EPFCT1G Microbump−10  
(Pb−Free)  
3000 /  
Tape & Reel  
Overvoltage Tolerant (OVT) specific pins operate higher than normal  
supply voltages, with no damage to the devices or to signal integrity.  
NLAS4717EPMTR2G WQFN−10  
(Pb−Free)  
3000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 5  
NLAS4717EP/D  

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