NLAS5223B

更新时间： 2024-11-05 03:46:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
12页	124K
描述
Ultra−Low 0.5 ohm Dual SPDT Analog Switch

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中文翻译

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数据手册

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NLAS5223B 数据手册

NLAS5223B, NLAS5223BL

Ultra−Low 0.5 W

Dual SPDT Analog Switch

The NLAS5223B is an advanced CMOS analog switch fabricated in

Sub−micron silicon gate CMOS technology. The device is a dual

Independent Single Pole Double Throw (SPDT) switch featuring

http://onsemi.com

MARKING

Ultra−Low R of 0.5 ꢀ, at V = 3.0 V.

The part also features guaranteed Break Before Make (BBM)

switching, assuring the switches never short the driver.

DIAGRAM

Features

XXMG

WQFN−10

CASE 488AQ

• Ultra−Low R , t0.5 ꢀ at V = 3.0 V

• NLAS5223B Interfaces with 2.8 V Chipset

• NLAS5223BL Interfaces with 1.8 V Chipset

• Single Supply Operation from 1.65−4.5 V

UQFN−10

CASE 488AT

XXMG

• Full 0−V Signal Handling Capability

• High Off−Channel Isolation

• Low Standby Current, t50 nA

• Low Distortion

= Specific Device Code

AD = NLAS5223BMNR2G

AE = NLAS5223BLMNR2G

AP = NLAS5223BMUR2G

= Date Code/Assembly Location

= Pb−Free Device

• R Flatness of 0.15

ꢀ

• High Continuous Current Capability

$300 mA Through Each Switch

(Note: Microdot may be in either location)

• Large Current Clamping Diodes at Analog Inputs

$300 mA Continuous Current Capability

• Package:

GND

NC2

♦ 1.4 x 1.8 x 0.75 mm WQFN−10 Pb−Free

♦ 1.4 x 1.8 x 0.55 mm UQFN−10 Pb−Free

IN2

NC1

• These are Pb−Free Devices

Applications

COM2

NO2

IN1

• Cell Phone Audio Block

• Speaker and Earphone Switching

• Ring−Tone Chip / Amplifier Switching

• Modems

COM1

NO1

FUNCTION TABLE

NO 1, 2

IN 1, 2

NC 1, 2

OFF

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

Publication Order Number:

September, 2006 − Rev. 3

NLAS5223B/D

12 3 4 5 6 7...12

中文翻译

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NLAS5223BMNR2G	ONSEMI	获取价格	Ultra−Low 0.5 ohm Dual SPDT Analog Switch
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