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NLAS5223BL PDF预览

NLAS5223BL

更新时间: 2024-11-05 07:20:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
11页 154K
描述
Ultra-Low 0.35 Dual SPDT Analog Switch

NLAS5223BL 数据手册

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NLAS5223B, NLAS5223BL  
Ultra-Low 0.35 W  
Dual SPDT Analog Switch  
The NLAS5223B is an advanced CMOS analog switch fabricated in  
Submicron silicon gate CMOS technology. The device is a dual  
Independent Single Pole Double Throw (SPDT) switch featuring  
http://onsemi.com  
MARKING  
UltraLow R of 0.35 , at V = 4.3 V.  
ON  
CC  
The part also features guaranteed Break Before Make (BBM)  
switching, assuring the switches never short the driver.  
DIAGRAM  
Features  
XXMG  
WQFN10  
CASE 488AQ  
UltraLow R , 0.35 (typ) at V = 4.3 V  
ON  
CC  
G
NLAS5223B Interfaces with 2.8 V Chipset  
NLAS5223BL Interfaces with 1.8 V Chipset  
Single Supply Operation from 1.654.5 V  
1
UQFN10  
CASE 488AT  
XXMG  
G
1
Full 0V Signal Handling Capability  
CC  
High OffChannel Isolation  
Low Standby Current, t50 nA  
Low Distortion  
XX  
= Specific Device Code  
AD = NLAS5223BMNR2G  
AE = NLAS5223BLMNR2G  
AP = NLAS5223BMUR2G  
= Date Code/Assembly Location  
= PbFree Device  
R Flatness of 0.15  
ON  
M
G
High Continuous Current Capability  
320 mA Through Each Switch  
(Note: Microdot may be in either location)  
Large Current Clamping Diodes at Analog Inputs  
320 mA Continuous Current Capability  
Package:  
1.4 x 1.8 x 0.75 mm WQFN10 PbFree  
1.4 x 1.8 x 0.55 mm UQFN10 PbFree  
These are PbFree Devices  
GND  
6
NC2  
7
IN2  
8
5
NC1  
Applications  
COM2  
NO2  
9
4
3
IN1  
Cell Phone Audio Block  
Speaker and Earphone Switching  
RingTone Chip/Amplifier Switching  
Modems  
10  
COM1  
1
2
V
CC  
NO1  
FUNCTION TABLE  
NO 1, 2  
IN 1, 2  
NC 1, 2  
0
1
OFF  
ON  
ON  
OFF  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 8  
NLAS5223B/D  

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