NLAS5223BL

更新时间： 2024-11-20 07:20:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
11页	154K
描述
Ultra-Low 0.35 Dual SPDT Analog Switch

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中文翻译

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数据手册

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NLAS5223BL 数据手册

NLAS5223B, NLAS5223BL

Ultra-Low 0.35 W

Dual SPDT Analog Switch

The NLAS5223B is an advanced CMOS analog switch fabricated in

Sub−micron silicon gate CMOS technology. The device is a dual

Independent Single Pole Double Throw (SPDT) switch featuring

http://onsemi.com

MARKING

Ultra−Low R of 0.35 ꢀ, at V = 4.3 V.

The part also features guaranteed Break Before Make (BBM)

switching, assuring the switches never short the driver.

DIAGRAM

Features

XXMG

WQFN10

CASE 488AQ

 Ultra−Low R , 0.35 ꢀ (typ) at V = 4.3 V

 NLAS5223B Interfaces with 2.8 V Chipset

 NLAS5223BL Interfaces with 1.8 V Chipset

 Single Supply Operation from 1.65−4.5 V

UQFN10

CASE 488AT

XXMG

 Full 0−V Signal Handling Capability

 High Off−Channel Isolation

 Low Standby Current, t50 nA

 Low Distortion

= Specific Device Code

AD = NLAS5223BMNR2G

AE = NLAS5223BLMNR2G

AP = NLAS5223BMUR2G

= Date Code/Assembly Location

= Pb−Free Device

 R Flatness of 0.15

ꢀ

 High Continuous Current Capability

 320 mA Through Each Switch

(Note: Microdot may be in either location)

 Large Current Clamping Diodes at Analog Inputs

 320 mA Continuous Current Capability

 Package:

 1.4 x 1.8 x 0.75 mm WQFN10 Pb−Free

 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free

 These are Pb−Free Devices

GND

NC2

IN2

NC1

Applications

COM2

NO2

IN1

 Cell Phone Audio Block

 Speaker and Earphone Switching

 Ring−Tone Chip/Amplifier Switching

 Modems

COM1

NO1

FUNCTION TABLE

NO 1, 2

IN 1, 2

NC 1, 2

OFF

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

 Semiconductor Components Industries, LLC, 2011

Publication Order Number:

October, 2011 − Rev. 8

NLAS5223B/D

12 3 4 5 6 7...11

中文翻译

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