5秒后页面跳转
NLAS5123MUR2G PDF预览

NLAS5123MUR2G

更新时间: 2024-11-20 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 复用器开关复用器或开关信号电路光电二极管PC
页数 文件大小 规格书
9页 175K
描述
SPDT, 1 ohm RON Switch

NLAS5123MUR2G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:DFN包装说明:VSON, SOLCC6,.04,16
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.33Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:226666
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline No-leadSamacsys Footprint Name:UDFN6, 1.2x1.0, 0.4P CASE 517AA ISSUE D
Samacsys Released Date:2018-05-22 11:51:23Is Samacsys:N
模拟集成电路 - 其他类型:SPDTJESD-30 代码:R-PDSO-N6
JESD-609代码:e4长度:1.2 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:6
标称断态隔离度:62 dB通态电阻匹配规范:0.15 Ω
最大通态电阻 (Ron):1.7 Ω最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,16
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:1.8/5 V
认证状态:Not Qualified座面最大高度:0.55 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.7 V
表面贴装:YES最长断开时间:25 ns
最长接通时间:35 ns切换:BREAK-BEFORE-MAKE
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1 mmBase Number Matches:1

NLAS5123MUR2G 数据手册

 浏览型号NLAS5123MUR2G的Datasheet PDF文件第2页浏览型号NLAS5123MUR2G的Datasheet PDF文件第3页浏览型号NLAS5123MUR2G的Datasheet PDF文件第4页浏览型号NLAS5123MUR2G的Datasheet PDF文件第5页浏览型号NLAS5123MUR2G的Datasheet PDF文件第6页浏览型号NLAS5123MUR2G的Datasheet PDF文件第7页 
NLAS5123  
SPDT, 1 W RON Switch  
The NLAS5123 is a low R SPDT analog switch. This device is  
ON  
designed for low operating voltage, high current switching of speaker  
output for cell phone applications. It can switch a balanced stereo  
output. The NLAS5123 can handle a balanced microphone/  
speaker/ringtone generator in a monophone mode. The device  
contains a breakbeforemake (BBM) feature.  
http://onsemi.com  
Features  
Single Supply Operation:  
1.65 V to 5.5 V V  
CC  
1
Function Directly from LiON Battery  
R Typical = 1.0 @ V = 4.5 V  
WDFN6  
MN SUFFIX  
CASE 506AS  
ON  
CC  
Low Static Power  
These are PbFree Devices  
Typical Applications  
Cell Phone Speaker/Microphone Switching  
RingtoneChip/Amplifier Switching  
Stereo Balanced (PushPull) Switching  
1
UDFN6  
MU SUFFIX  
CASE 517AA  
Important Information  
Continuous Current Rating Through each Switch ±300 mA  
1.2 x 1.0 x 0.4P mm 6Lead Thin DFN Package  
MARKING DIAGRAM  
W M  
G
W
M
G
= Specific Device Code  
= Date Code & Assembly Location  
= PbFree Device  
PIN ASSIGNMENTS  
1
2
3
6
5
4
NO  
GND  
NC  
IN  
V
CC  
COM  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 1  
NLAS5123/D  

与NLAS5123MUR2G相关器件

型号 品牌 获取价格 描述 数据表
NLAS5157 ONSEMI

获取价格

Ultra-Low 0.4  SPDT Analog Switch
NLAS5157MUTCG ONSEMI

获取价格

Ultra-Low 0.4  SPDT Analog Switch
NLAS5213 ONSEMI

获取价格

1? RON DPST and Dual SPST Switches
NLAS5213AMUTAG ONSEMI

获取价格

1? RON DPST and Dual SPST Switches
NLAS5213AUSG ONSEMI

获取价格

1? RON DPST and Dual SPST Switches
NLAS5213BMUTAG ONSEMI

获取价格

1? RON DPST and Dual SPST Switches
NLAS5213BUSG ONSEMI

获取价格

1? RON DPST and Dual SPST Switches
NLAS5223 ONSEMI

获取价格

Ultra-Low 0.5 ohm Dual SPDT Analog Switch
NLAS5223_06 ONSEMI

获取价格

Ultra-Low 0.5 ohm Dual SPDT Analog Switch
NLAS52231 ONSEMI

获取价格

Ultra-Low 0.4ヘ Dual SPDT Analog Switch with O