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NLAS5123MUR2G PDF预览

NLAS5123MUR2G

更新时间: 2024-09-15 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 复用器开关复用器或开关信号电路光电二极管PC
页数 文件大小 规格书
9页 175K
描述
SPDT, 1 ohm RON Switch

NLAS5123MUR2G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:DFN包装说明:VSON, SOLCC6,.04,16
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.33Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:226666
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline No-leadSamacsys Footprint Name:UDFN6, 1.2x1.0, 0.4P CASE 517AA ISSUE D
Samacsys Released Date:2018-05-22 11:51:23Is Samacsys:N
模拟集成电路 - 其他类型:SPDTJESD-30 代码:R-PDSO-N6
JESD-609代码:e4长度:1.2 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:6
标称断态隔离度:62 dB通态电阻匹配规范:0.15 Ω
最大通态电阻 (Ron):1.7 Ω最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,16
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:1.8/5 V
认证状态:Not Qualified座面最大高度:0.55 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.7 V
表面贴装:YES最长断开时间:25 ns
最长接通时间:35 ns切换:BREAK-BEFORE-MAKE
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1 mmBase Number Matches:1

NLAS5123MUR2G 数据手册

 浏览型号NLAS5123MUR2G的Datasheet PDF文件第2页浏览型号NLAS5123MUR2G的Datasheet PDF文件第3页浏览型号NLAS5123MUR2G的Datasheet PDF文件第4页浏览型号NLAS5123MUR2G的Datasheet PDF文件第5页浏览型号NLAS5123MUR2G的Datasheet PDF文件第6页浏览型号NLAS5123MUR2G的Datasheet PDF文件第7页 
NLAS5123  
SPDT, 1 W RON Switch  
The NLAS5123 is a low R SPDT analog switch. This device is  
ON  
designed for low operating voltage, high current switching of speaker  
output for cell phone applications. It can switch a balanced stereo  
output. The NLAS5123 can handle a balanced microphone/  
speaker/ringtone generator in a monophone mode. The device  
contains a breakbeforemake (BBM) feature.  
http://onsemi.com  
Features  
Single Supply Operation:  
1.65 V to 5.5 V V  
CC  
1
Function Directly from LiON Battery  
R Typical = 1.0 @ V = 4.5 V  
WDFN6  
MN SUFFIX  
CASE 506AS  
ON  
CC  
Low Static Power  
These are PbFree Devices  
Typical Applications  
Cell Phone Speaker/Microphone Switching  
RingtoneChip/Amplifier Switching  
Stereo Balanced (PushPull) Switching  
1
UDFN6  
MU SUFFIX  
CASE 517AA  
Important Information  
Continuous Current Rating Through each Switch ±300 mA  
1.2 x 1.0 x 0.4P mm 6Lead Thin DFN Package  
MARKING DIAGRAM  
W M  
G
W
M
G
= Specific Device Code  
= Date Code & Assembly Location  
= PbFree Device  
PIN ASSIGNMENTS  
1
2
3
6
5
4
NO  
GND  
NC  
IN  
V
CC  
COM  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 1  
NLAS5123/D  

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